National Changhua University of Education Institutional Repository : Item 987654321/15260
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6469/11641
Visitors : 18987018      Online Users : 513
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item:

Title: Formation of Self-assembled ZnTe Quantum Dots on ZnSe Buffer Layer Grown on GaAs Substrate by Molecular Beam Epitaxy
Authors: Kuo, M. C.;Yang, C. S.;Tseng, P. Y.;Lee, J.;Shen, J. L.;Chou, W. C.;Shih, Yu-Tai;Ku, C. T.;Lee, M. C.;Chen, W. K.
Contributors: 物理學系
Keywords: A1. Atomic force microscopy;A1. Nanostructures;A3. Molecular beam epitaxy;B2. Semiconducting II-VI materials
Date: 2002-07
Issue Date: 2013-01-07T09:25:31Z
Publisher: Elsevier
Abstract: Self-assembled ZnTe quantum dot structures were grown by molecular beam epitaxy on GaAs substrates with a 200 nm ZnSe buffer layer. Surface morphology was studied by atomic force microscopy. A three-dimensional Volmer–Weber growth mode was identified. Two types of dots were observed. Strong photoluminescence observed at 1.9–2.2 eV was attributed to emission from the large type II ZnTe quantum dots. Emission from the smaller ZnTe quantum dots was observed at an energy of around 2.26 eV. The density of the larger and smaller dots was approximately 108/cm2 and 109/cm2, respectively.
Relation: Journal of Crystal Growth, 242(3-4): 533-537
Appears in Collections:[Department of Physics] Periodical Articles

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback