資料載入中.....
|
請使用永久網址來引用或連結此文件:
http://ir.ncue.edu.tw/ir/handle/987654321/15261
|
| 題名: | Optical Properties of Zn1-xMnxTe Epilayers Grown by Molecular Beam Epitaxy |
| 作者: | Shih, Yu-Tai;Chiang, W. C.;Yang, C. S.;Kuo, M. C.;Chou, W. C. |
| 貢獻者: | 物理學系 |
| 日期: | 2002-09
|
| 上傳時間: | 2013-01-07T09:25:32Z
|
| 出版者: | American Institute of Physics |
| 摘要: | Zn1−xMnxTe (0⩽x⩽0.268) epilayers were grown on GaAs(001) substrates by molecular beam epitaxy. The optical properties of the epilayers were studied using reflectivity, transmission, and photoluminescence (PL) measurements. The energy gaps of the epilayers were found to increase linearly with Mn concentration. From the PL spectra, a redshift of the PL peaks was observed as the temperature was increased. The exciton activation energies of the epilayers were determined by the plots of logarithmic-integrated PL intensity versus inverse temperature. Accordingly, they increase with Mn concentration. The Varshni and O’Donnell relations, which mimic the temperature dependence of semiconductor energy gaps were used to fit the experimental data [Y. P. Varshni, Physica 34, 149 (1967); R. P. O’Donnell and X. Chen, Appl. Phys. Lett. 58, 2924 (1991)]. Good fits were obtained by both relations. From the fitted results, the entropy of formation of electron–hole pairs in the Zn1−xMnxTe epilayers at room temperature was estimated to be roughly 0.5 meV/K. |
| 關聯: | J. Appl. Phys., 92(5): 2446-2450 |
| 顯示於類別: | [物理學系] 期刊論文
|
文件中的檔案:
| 檔案 |
大小 | 格式 | 瀏覽次數 |
|---|
| index.html | 0Kb | HTML | 568 | 檢視/開啟 |
|
在NCUEIR中所有的資料項目都受到原著作權保護.
|
