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Title: Optical Properties of Zn1-xCdxSe Epilayers Grown on (100) GaAs by Molecular Beam Epitaxy
Authors: Kuo, M. C.;Chiu, K. C.;Shih, T. H.;Lai, Y. J.;Yang, C. S.;Chen, W. K.;Chuu, D. S.;Lee, M. C.;Chou, W. C.;Jeng, S. Y.;Shih, Yu-Tai;Lan, W. H.
Contributors: 物理學系
Keywords: Activation energy;Molecular beam epitaxy;Photoluminescence;ZnCdSe epilayer
Date: 2004-08
Issue Date: 2013-01-07T09:25:35Z
Publisher: Japan Science and Technology Agency
Abstract: Zn1-xCdxSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters .BETA. (161 K to 368 K) and (h.NU.) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by .GAMMA.(T)=.GAMMA.0+.GAMMA.aT+.GAMMA.LO1/[exp(h/2.PI..OMEGA.LO1/kT)-1]+.GAMMA.LO2/[exp(h/2.PI.LO2/kT)-1]+.GAMMA.iexp(-(Eb)/kT). The impurity binding energy, (Eb), was found to decrease as the Cd composition increases.
Relation: Jpn. J. Appl. Phys., 43(8A): 5145-5150
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