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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15266

Title: Photoluminescence of ZnSexTe1-x/ZnTe Multiple-quantum-well Structures Grown by Molecular-Beam Epitaxy
Authors: Shih, Yu-Tai;Tsai, Y. L.;Yuan, C. T.;Chen, C. Y.;Yang, C. S.;Chou, W. C.
Contributors: 物理學系
Date: 2004-12
Issue Date: 2013-01-07T09:25:35Z
Publisher: American Institute of Physics
Abstract: This work investigates photoluminescence (PL) spectra from ZnSexTe1−x∕ZnTe multiple-quantum-well structures grown on GaAs(001) substrates by molecular-beam epitaxy. The PL data reveal that the band alignment of the ZnSexTe1−x∕ZnTe system is type II. The thermal activation energy for quenching the PL intensity was determined from the temperature-dependent PL spectra. The activation energy was found to increase initially and then decrease as the thickness of the ZnSexTe1−x layers decreases from 7 to 3 nm. The temperature-dependent broadening of the PL linewidth was also investigated. The LO-phonon scattering was found to be the dominant broadening mechanism.
Relation: J. Appl. Phys., 96(12): 7267-7271
Appears in Collections:[物理學系] 期刊論文

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