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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15271

Title: Quasi-Stranski-Krastanow Growth Mode of Self-assembled CdTe Quantum Dots Grown on ZnSe by Molecular Beam Epitaxy
Authors: Yang, C. S.;Lai, Y. J.;Chou, W. C.;Chen, D. S.;Wang, J. S.;Chien, K. F.;Shih, Yu-Tai
Contributors: 物理學系
Keywords: A1. Growth models;A3. Molecular beam epitaxy;A3. Quantum dots;B1. Cadmium compounds;B2. Semiconducting II-VI materials
Date: 2007-04
Issue Date: 2013-01-07T09:25:49Z
Publisher: Elsevier
Abstract: This study investigates the growth mode of highly lattice-mismatch (∼14%) CdTe self-assembled quantum dots grown on a ZnSe buffer-layer by molecular beam epitaxy. Two growth processes were used to prepare the samples. For the group-I samples, Te and Cd sources were alternately used to deposit a CdTe coverage layer of 0.6 to 8.0 mono-layers on a Zn-stabilized ZnSe buffer layer. The growth process of group-II samples was reversed; that is, the Cd beam was supplied first on a Se-stabilized ZnSe buffer layer. The optical spectra, including the power-dependent, time-resolved photoluminescence (PL) and PL excitation measurement, demonstrate a ZnTe-like and a CdSe-like two-dimensional precursor layer (wetting layer) in the group-I and group-II samples, respectively. Following the formation of the precursor layer, three-dimensional highly strained CdTe quantum dots were formed. Accordingly, the growth of CdTe self-assembled quantum-dot structures was attributed to the quasi-Stranski–Krastanow mode.
Relation: Journal of Crystal Growth, 301-302: 301-305
Appears in Collections:[物理學系] 期刊論文

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