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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15333

Title: Transport Properties of Patterned Magnetic Tunnel Junctions Using Lift-Off Method
Authors: Wu, Kuo-Ming;Wu, J. C.;Horng, Lance
Contributors: 物理學系
Date: 2006-09
Issue Date: 2013-02-05T02:17:25Z
Publisher: American Institute of Physics
Abstract: We develop a new process of fabricating MTJs which avoids the short circuit of the trilayers induced by the redeposit effect in etching process. The junction structures studied were prepared by UHV DC/RF magnetron sputtering. All MTJs have the same structure: Al (60)/Co50FE50 (25)/Al + oxidation (1.2)/Ni20Fe80 (3O)/A1 (60), with all thickness given in nanometers. The thickness of AlOx correspond to the effective barrier width determined by fitting I–V curve to Simmons Equation. The magnetization hysteresis (MH) loops are measured by a SQUID system at 298K. All MR measurements are taken at 180mV with 20 × 50 (µm2) junction areas.
Relation: AIP Conference Proceedings, 850(1): 1486-1487
Appears in Collections:[物理學系] 會議論文

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