English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6507/11669
造訪人次 : 29720231      線上人數 : 400
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/15387

題名: Angular Dependence of Tunneling Magnetoresistance in La0.7Sr0.3MnO3 Step-edge Junctions
作者: Wang, L. M.;Lee, Jyh-Yi;Yang, H. C.;Chen, J. C.;Liu, Hsiang-Lin;Lu, Kun-Sheng;Horng, Lance;Horng, H. E.
貢獻者: 物理學系
關鍵詞: Tunneling;Magnetic properties of thin films;Magnetic thin film devices
日期: 2006-03
上傳時間: 2013-02-05T02:19:09Z
出版者: Elsevier
摘要: La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been fabricated on step-edge (0 0 1) SrTiO3 substrates with a high step-edge angle. In the measurement of magnetoresistance (MR) ratio versus external magnetic field H, butterfly-like MR curves are clearly observed. The MR(H) curves vary with θ, the angle between the applied magnetic field and the current direction in the substrate plane, showing anisotropic MR properties. A much broader MR(H) response is observed for the configuration of H perpendicular to the substrate plane. Additionally, the maxima-MR field Hp almost coincides with the coercive field Hc for θ<60° but obeys a different form from Hc(θ). The high-field junction resistance shows an intrinsic sin2θ angular dependence, while the low-field resistance shows an extrinsic cos(4θ) angular dependence. The distinctive features are mainly due to the induced magnetization anisotropy in the artificial steps of grain boundaries.
關聯: J. Magn. Magn. Mater., 298(1): 48-55
顯示於類別:[物理學系] 期刊論文

文件中的檔案:

檔案 大小格式瀏覽次數
index.html0KbHTML689檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋