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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15393

Title: The Switching Characteristics of Free Layer of Patterned Magnetic Tunnel Junction Device
Authors: Chen, C. C.;Wang, Y. R.;Kuo, C. Y.;Wu, J. C.;Horng, Lance;Wu, Te-Ho;Yoshimura, S.;Tsunoda, M.;Takahashi, M.
Contributors: 物理學系
Keywords: Free layer switching;Magnetic tunnel junctions
Date: 2006-09
Issue Date: 2013-02-05T02:19:16Z
Publisher: Elsevier
Abstract: The free layer switching properties of microstructured magnetic tunnel junctions have been investigated. The M–H loop of nonpatterned film shows ferromagnetic coupling with 10 Oe shifting associated with the interlayer roughness coupling. The MR curve of the patterned element shows stepped minor loop, less loop shifting, and larger coercive field due to shape anisotropy and stray field effects. MFM images of the element show nonuniform domain structures during reversal process.
Relation: Journal of Magnetism and Magnetic Materials, 304(1): e285-e287
Appears in Collections:[物理學系] 期刊論文

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