National Changhua University of Education Institutional Repository : Item 987654321/15393
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 25210818      Online Users : 83
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item:

Title: The Switching Characteristics of Free Layer of Patterned Magnetic Tunnel Junction Device
Authors: Chen, C. C.;Wang, Y. R.;Kuo, C. Y.;Wu, J. C.;Horng, Lance;Wu, Te-Ho;Yoshimura, S.;Tsunoda, M.;Takahashi, M.
Contributors: 物理學系
Keywords: Free layer switching;Magnetic tunnel junctions
Date: 2006-09
Issue Date: 2013-02-05T02:19:16Z
Publisher: Elsevier
Abstract: The free layer switching properties of microstructured magnetic tunnel junctions have been investigated. The M–H loop of nonpatterned film shows ferromagnetic coupling with 10 Oe shifting associated with the interlayer roughness coupling. The MR curve of the patterned element shows stepped minor loop, less loop shifting, and larger coercive field due to shape anisotropy and stray field effects. MFM images of the element show nonuniform domain structures during reversal process.
Relation: Journal of Magnetism and Magnetic Materials, 304(1): e285-e287
Appears in Collections:[Department of Physics] Periodical Articles

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback