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题名: The Switching Characteristics of Free Layer of Patterned Magnetic Tunnel Junction Device
作者: Chen, C. C.;Wang, Y. R.;Kuo, C. Y.;Wu, J. C.;Horng, Lance;Wu, Te-Ho;Yoshimura, S.;Tsunoda, M.;Takahashi, M.
贡献者: 物理學系
关键词: Free layer switching;Magnetic tunnel junctions
日期: 2006-09
上传时间: 2013-02-05T02:19:16Z
出版者: Elsevier
摘要: The free layer switching properties of microstructured magnetic tunnel junctions have been investigated. The M–H loop of nonpatterned film shows ferromagnetic coupling with 10 Oe shifting associated with the interlayer roughness coupling. The MR curve of the patterned element shows stepped minor loop, less loop shifting, and larger coercive field due to shape anisotropy and stray field effects. MFM images of the element show nonuniform domain structures during reversal process.
關聯: Journal of Magnetism and Magnetic Materials, 304(1): e285-e287
显示于类别:[物理學系] 期刊論文


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