National Changhua University of Education Institutional Repository : Item 987654321/15393
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6487/11649
造訪人次 : 28507602      線上人數 : 470
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋


題名: The Switching Characteristics of Free Layer of Patterned Magnetic Tunnel Junction Device
作者: Chen, C. C.;Wang, Y. R.;Kuo, C. Y.;Wu, J. C.;Horng, Lance;Wu, Te-Ho;Yoshimura, S.;Tsunoda, M.;Takahashi, M.
貢獻者: 物理學系
關鍵詞: Free layer switching;Magnetic tunnel junctions
日期: 2006-09
上傳時間: 2013-02-05T02:19:16Z
出版者: Elsevier
摘要: The free layer switching properties of microstructured magnetic tunnel junctions have been investigated. The M–H loop of nonpatterned film shows ferromagnetic coupling with 10 Oe shifting associated with the interlayer roughness coupling. The MR curve of the patterned element shows stepped minor loop, less loop shifting, and larger coercive field due to shape anisotropy and stray field effects. MFM images of the element show nonuniform domain structures during reversal process.
關聯: Journal of Magnetism and Magnetic Materials, 304(1): e285-e287
顯示於類別:[物理學系] 期刊論文


檔案 大小格式瀏覽次數



DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋