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請使用永久網址來引用或連結此文件:
http://ir.ncue.edu.tw/ir/handle/987654321/15399
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| 題名: | Parameter Optimization for An ICP Deep Silicon Etching System |
| 作者: | Chen, S. C.;Lin, Y. C.;Wu, J. C.;Horng, Lance;Cheng, C. H. |
| 貢獻者: | 物理學系 |
| 日期: | 2007-03
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| 上傳時間: | 2013-02-05T02:19:32Z
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| 出版者: | SpringerLink |
| 摘要: | The paper aims at investigating the parameter
optimization of silicon micro- and nano-sized etching by
an inductive coupled plasma-reactive ion etching system.
The source power and the SF6 gas pressure are two main
parameters that dominate etching. A pre-test is conducted
to estimate the process window of the SF6 gas
pressure at some given source powers. The process
window is a parameter range in which the etching result
is acceptable but may not be the best. In order to achieve
excellent etching quality, the Taguchi experimental
method is applied to evaluate parameters and find their
optimum conditions.With the source power and SF6 gas
pressure being set into the process window, four
parameters, which are the substrate temperature, the
bias power, the gas cycle time and the C4F8 gas flow
rate, are evaluated and optimized for micro- and nanosized
etching. An impressive result, 200-nm-diameter
pillar array with the pitch of 400 nm, is realized. |
| 關聯: | Microsyst Technol., 13(5-6): 465-474 |
| 顯示於類別: | [物理學系] 期刊論文
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