English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6469/11641
Visitors : 19733205      Online Users : 345
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15399

Title: Parameter Optimization for An ICP Deep Silicon Etching System
Authors: Chen, S. C.;Lin, Y. C.;Wu, J. C.;Horng, Lance;Cheng, C. H.
Contributors: 物理學系
Date: 2007-03
Issue Date: 2013-02-05T02:19:32Z
Publisher: SpringerLink
Abstract: The paper aims at investigating the parameter
optimization of silicon micro- and nano-sized etching by
an inductive coupled plasma-reactive ion etching system.
The source power and the SF6 gas pressure are two main
parameters that dominate etching. A pre-test is conducted
to estimate the process window of the SF6 gas
pressure at some given source powers. The process
window is a parameter range in which the etching result
is acceptable but may not be the best. In order to achieve
excellent etching quality, the Taguchi experimental
method is applied to evaluate parameters and find their
optimum conditions.With the source power and SF6 gas
pressure being set into the process window, four
parameters, which are the substrate temperature, the
bias power, the gas cycle time and the C4F8 gas flow
rate, are evaluated and optimized for micro- and nanosized
etching. An impressive result, 200-nm-diameter
pillar array with the pitch of 400 nm, is realized.
Relation: Microsyst Technol., 13(5-6): 465-474
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML445View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback