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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15404

Title: Repair Effect on Patterned CoFeB-based Magnetic Tunneling Junction Using Rapid Thermal Annealing
Authors: Wu, Kuo-Ming;Wang, Yung-Hung;Chen, Wei-Chuan;Yang, Shan-Yi;Shen, Kuei-Hung;Kao, Ming-Jer;Tsai, Ming-Jinn;Kuo, Cheng-Yi;Wu, Jong-Ching;Horng, Lance
Contributors: 物理學系
Keywords: Magnetic tunneling junction (MTJ);Annealing effect
Date: 2007-03
Issue Date: 2013-02-05T02:19:37Z
Publisher: Elsevier
Abstract: Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co60Fe20B20 was studied through magnetoresistance (R–H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R–H loops were enhanced from 100 °C to 250 °C. Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 °C rapid annealing and still shows about 25% TMR even after 400 °C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature.
Relation: J. Magn. Magn. Mater., 310(2): 1920-1922
Appears in Collections:[Department of Physics] Periodical Articles

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