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http://ir.ncue.edu.tw/ir/handle/987654321/15406
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題名: | Controllable Remanent States on Microstructured Magnetic Tunnel Junction Rings |
作者: | Chen, C. C.;Chao, C. T.;Kuo, C. Y.;Horng, Lance;Wu, Te-Ho;Chern, G.;Huang, C. Y.;Isogami, S.;Tsunoda, M.;Takahashi, M.;Wu, J. C. |
貢獻者: | 物理學系 |
關鍵詞: | Magnetic tunneling junction (MTJ);Magnetoresistance;Multibit applicationRing-shaped cells |
日期: | 2007-06
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上傳時間: | 2013-02-05T02:19:39Z
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出版者: | IEEE |
摘要: | Controllable remanent states have been studied on the microstructured magnetic tunnel junction (MTJ) rings through magnetoresistance measurements. These rings were designed accordingly with an outer/inner diameter of 2/1 and 1/0.5 mum to reveal two and one metastable states, respectively, during the magnetization reversal process on the free layer. The distinct magnetoresistance levels based on the tunneling magnetoresistance effect are associated with the relative alignment of magnetization of free layer and pinned layer. As a result, four and three controllable remanent magnetic states on the free layer were manipulated by ramping external magnetic fields, applied in the biasing direction, with various field ranges, giving rise to four and three stable magnetoresistance values at zero field. These results may provide a great potential in magnetic multibit memory applications using ring-shaped cells |
關聯: | IEEE Trans. on Magnetics, 43(6): 2824-2826 |
顯示於類別: | [物理學系] 期刊論文
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