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题名: Controllable Remanent States on Microstructured Magnetic Tunnel Junction Rings
作者: Chen, C. C.;Chao, C. T.;Kuo, C. Y.;Horng, Lance;Wu, Te-Ho;Chern, G.;Huang, C. Y.;Isogami, S.;Tsunoda, M.;Takahashi, M.;Wu, J. C.
贡献者: 物理學系
关键词: Magnetic tunneling junction (MTJ);Magnetoresistance;Multibit applicationRing-shaped cells
日期: 2007-06
上传时间: 2013-02-05T02:19:39Z
出版者: IEEE
摘要: Controllable remanent states have been studied on the microstructured magnetic tunnel junction (MTJ) rings through magnetoresistance measurements. These rings were designed accordingly with an outer/inner diameter of 2/1 and 1/0.5 mum to reveal two and one metastable states, respectively, during the magnetization reversal process on the free layer. The distinct magnetoresistance levels based on the tunneling magnetoresistance effect are associated with the relative alignment of magnetization of free layer and pinned layer. As a result, four and three controllable remanent magnetic states on the free layer were manipulated by ramping external magnetic fields, applied in the biasing direction, with various field ranges, giving rise to four and three stable magnetoresistance values at zero field. These results may provide a great potential in magnetic multibit memory applications using ring-shaped cells
關聯: IEEE Trans. on Magnetics, 43(6): 2824-2826
显示于类别:[物理學系] 期刊論文


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