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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15409

Title: Effect of Transient Annealing on Patterned CoFeB-based Magnetic Tunnel Junctions
Authors: Wu, Kuo-Ming;Huang, Chao-Hsien;Lin, Shiao-Chi;Kao, Ming-Jer;Tsai, Ming-Jin;Wu, Jong-Ching;Horng, Lance
Contributors: 物理學系
Date: 2007-12
Issue Date: 2013-02-05T02:19:42Z
Publisher: WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Abstract: In this study, the transient annealing effect on the switching behavior of microstructured Co60Fe20B20-based magnetic tunnel junctions has been studied through magnetoresistacne measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta (20)/ PtMn (15)/ CoFeB (3)/ Al (0.7)-oxide/ CoFeB (2)/ Ru (8)/ Ta (40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 °C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200∼250 °C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 °C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 °C annealing and results in less damage at temperature of 350 °C and 400 °C.
Relation: physica status solidi (a), 204(12): 3934-3937
Appears in Collections:[Department of Physics] Periodical Articles

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