National Changhua University of Education Institutional Repository : Item 987654321/15409
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6469/11641
造访人次 : 19750553      在线人数 : 267
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻


题名: Effect of Transient Annealing on Patterned CoFeB-based Magnetic Tunnel Junctions
作者: Wu, Kuo-Ming;Huang, Chao-Hsien;Lin, Shiao-Chi;Kao, Ming-Jer;Tsai, Ming-Jin;Wu, Jong-Ching;Horng, Lance
贡献者: 物理學系
日期: 2007-12
上传时间: 2013-02-05T02:19:42Z
出版者: WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
摘要: In this study, the transient annealing effect on the switching behavior of microstructured Co60Fe20B20-based magnetic tunnel junctions has been studied through magnetoresistacne measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta (20)/ PtMn (15)/ CoFeB (3)/ Al (0.7)-oxide/ CoFeB (2)/ Ru (8)/ Ta (40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 °C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200∼250 °C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 °C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 °C annealing and results in less damage at temperature of 350 °C and 400 °C.
關聯: physica status solidi (a), 204(12): 3934-3937
显示于类别:[物理學系] 期刊論文


档案 大小格式浏览次数



DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈