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http://ir.ncue.edu.tw/ir/handle/987654321/15411
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| Title: | Hopping Conduction Behavior with the Coulomb Effects in Colossal Magnetoresistance Materials |
| Authors: | Lin, C. H.;Young, S. L.;Chen, H. Z.;Kao, M. C.;Horng, Lance |
| Contributors: | 物理學系 |
| Date: | 2007-12
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| Issue Date: | 2013-02-05T02:19:44Z
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| Publisher: | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| Abstract: | We report on the temperature dependence of resistivity in La0.7–xPrxPb0.3MnO3 (x =0, 0.5, 0.7) bulk samples in order to explore the hopping transport behavior with the Coulomb effects for the colossal magnetoresistance materials. The experimental observations in La0.7–xPrxPb0.3MnO3 (x =0.5, 0.7) bulk samples reveal the exponential temperature dependence of resistivity ϱ (T) ∞ exp [(T1/T)n] with n = 1/2, when system was the paramagnetic (PM) insulator at the high temperature range (T>Tp). Evidence for the hopping conduction with Coulomb effects is presented By using the approximate method of the VRH conduction in the localization regime base on Efros and Shklovskii model [A. L. Efros and B. I. Shklovskii, J. Phys. C, Solid State Phys. 8, L49 (1975)], the localization length of eg electrons can be estimated with the relationship, ξ=2.8e2/(4πε0κkBT1). The reasonable results of localization length can be evaluated to explain the possibility of the presence of the Coulomb interactions in these CMR materials. |
| Relation: | physica status solidi (b), 244(12): 4415-4418 |
| Appears in Collections: | [物理學系] 期刊論文
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