National Changhua University of Education Institutional Repository : Item 987654321/15411
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题名: Hopping Conduction Behavior with the Coulomb Effects in Colossal Magnetoresistance Materials
作者: Lin, C. H.;Young, S. L.;Chen, H. Z.;Kao, M. C.;Horng, Lance
贡献者: 物理學系
日期: 2007-12
上传时间: 2013-02-05T02:19:44Z
出版者: WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
摘要: We report on the temperature dependence of resistivity in La0.7–xPrxPb0.3MnO3 (x =0, 0.5, 0.7) bulk samples in order to explore the hopping transport behavior with the Coulomb effects for the colossal magnetoresistance materials. The experimental observations in La0.7–xPrxPb0.3MnO3 (x =0.5, 0.7) bulk samples reveal the exponential temperature dependence of resistivity ϱ (T) ∞ exp [(T1/T)n] with n = 1/2, when system was the paramagnetic (PM) insulator at the high temperature range (T>Tp). Evidence for the hopping conduction with Coulomb effects is presented By using the approximate method of the VRH conduction in the localization regime base on Efros and Shklovskii model [A. L. Efros and B. I. Shklovskii, J. Phys. C, Solid State Phys. 8, L49 (1975)], the localization length of eg electrons can be estimated with the relationship, ξ=2.8e2/(4πε0κkBT1). The reasonable results of localization length can be evaluated to explain the possibility of the presence of the Coulomb interactions in these CMR materials.
關聯: physica status solidi (b), 244(12): 4415-4418
显示于类别:[物理學系] 期刊論文

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