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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15414

Title: Brief Rapid Thermal Treatment Effect on Patterned CoFeB-based Magnetic Tunneling Junctions
Authors: Wu, Kuo-Ming;Huang, Chao-Hsien;Wang, Yung-Hung;Kao, Ming-Jer;Tsai, Ming-Jinn;Wu, Jong-Ching;Horng, Lance
Contributors: 物理學系
Date: 2007
Issue Date: 2013-02-05T02:19:48Z
Publisher: American Institute of Physics
Abstract: The brief thermal treatment effects on the magnetoresistance of microstructured Co60Fe20B20-based magnetic tunneling junctions have been studied. The elliptical shape of devices with long/short axis of 4/2 μm was patterned out of film stack of seed layer (20)/PtMn(15)/Co60Fe20B20(3)/Al(0.7)oxide/C60Fe20B20(20)/capping layer (48) (thickness unit in nanometers) combining conventional lithography and inductively coupled plasma reactive ion beam etching technologies. The thermal annealing was carried out with device loading into a furnace with preset temperatures ranging from 100 to 400 °C for only 5 min in the absence of any external magnetic field. The magnetoresistance was found to increase with increasing annealing temperatures up to 250 °C and then decrease at higher annealing temperatures. In addition, the magnetoresistance ratio of around 35%, similar to that of as-fabricated devices, sustains up to annealing temperature of 350 °C. This survival of magnetoresistance at higher annealing temperature is due to boron conservation in the amorphous CoFeB ferromagnetic layer at higher annealing temperature for only a short time, which is manifested using x-ray diffractometer technique.
Relation: J. Appl. Phys., 101(9): 09B503
Appears in Collections:[物理學系] 期刊論文

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