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Title: Influence of Frequency and DC Bias on Magneto-impedance Behaviors in Double-MgO Magnetic Tunnel Junctions
Authors: Kuoa, K. M.;Lin, C. Y.;Lin, C. T.;Chern, G.;Chao, C. T.;Horng, Lance;Wu, J. C.;Wu, Te-Ho;Huang, C. Y.;Ohyama, H.;Isogami, S.;Tsunoda, M.;Takahashi, M.
Contributors: 物理學系
Keywords: A. Magnesium compounds;D. Tunnelling magnetoresistance;D. Magnetisation;D. Electric impedance
Date: 2010-10
Issue Date: 2013-02-05T02:20:34Z
Publisher: Elsevier
Abstract: Magneto-impedance (MI) of a double-barrier MgO magnetic tunnel junction (DMTJ) is measured as a function of frequency (20 Hz–3 MHz) and DC bias (−1 to 1 V) under magnetic parallel and antiparallel states. A strong nonlinear effect is observed at all frequencies and the MI changes from positive to negative at the relaxation frequency ∼1/RC. A frequency–dc bias (f–V) “phase diagram” is mapped out to describe the combination effects of the magneto-impedance response. The decay of the tunnel magneto-resistance (TMR) and tunnel magneto-capacitance (TMC) at high voltage is sufficiently reduced by the double-MgO barrier. The V1 / 2 (the voltage that magnetic response drops to 1/2 of its maximum) of TMC reaches an average value of ∼1.35 V, which is larger than the V1 / 2 of TMR ∼0.95 V, suggesting that the response of TMC is more stable than TMR for high frequency application.
Relation: Solid State Communications, 150(37-38): 1856-1859
Appears in Collections:[物理學系] 期刊論文

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