National Changhua University of Education Institutional Repository : Item 987654321/15456

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 29930430 Online Users : 466

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/15456

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15456

Title:	Hall Effect Due to Channeled Pinning Potential in Nb Thin Films
Authors:	Wu, T. C.;Chen, Y. H.;Yang, M. W.;Cao, R.;Yang, T. J.;Wu, J. C.;Horng, Lance
Contributors:	物理學系
Keywords:	Thin films;Artificial arrays;Hall Effect;Pinning effect
Date:	2011-09
Issue Date:	2013-02-05T02:20:53Z
Publisher:	Elsevier
Abstract:	We have studied the Magnetoresistance and Hall Effect in Nb superconducting thin films with triangular arrays of holes. Three different arrays of defects have been prepared with different orientations with respect to the current. Because vortex dynamics in the mixed state in type-II superconductors is strongly influenced by the pinning centers, a channeled pinning landscape is formed by the pinned vortices. It is suggested that the motion of interstitial vortices has great influence by the channel. When vortices propagate through these arrays, both the longitudinal and transversal voltages show cusp-like anomalies at matching fields. Vortices can be guided by the channel formed between pinned vortices. The longitudinal voltages are the same when there is a sign change of magnetic field. The longitudinal and transversal Hall voltages are dependent on the rotating angle of the arrays.
Relation:	Thin Solid Films, 519(23): 8317-8319
Appears in Collections:	[Department of Physics] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	756	View/Open