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Title: Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures
Authors: Lin, Chun-Jung;Lin, Chi-Kua;Chang, Chih-Wei;Chue, Yu-Lun;Kuo, Hao-Chung;Diau, Eric Wei-Guang;Chou, Li-Jen;Lin, Gong-Ru
Contributors: 化學系
Keywords: Silicon nanocrystals;Photoluminescence;Plasma enhanced chemical vapor deposition;Si-rich silicon dioxide;Lifetime
Date: 2006
Issue Date: 2013-02-05T02:21:16Z
Publisher: The Japan Society of Applied Physics
Abstract: Near-infrared photoluminescent dynamics of thermally annealed Si-rich SiOx films grown by plasma enhanced chemical vapor deposition at different substrate temperatures and N2O/SiH4 fluence ratios are studied. The size of nanocrystallite Si (nc-Si) critically depends on the density of oxygen atoms in a Si-rich layer when the N2O/SiH4 ratio is smaller than 4; that is, it significantly increases at low N2O/SiH4 ratios. Deposition at a high N2O/SiH4 ratio strongly reduces the density of nc-Si and degrades the luminescence at 700–800 nm since the density of oxygen atoms is sufficient in the reaction of nc-Si with silicon atoms and formation of a stoichiometric SiO2 matrix. Under a high RF power condition, the increasing substrate temperature usually inhibits the precipitation of nc-Si since high-temperature growth facilitates stochiometric SiO2 deposition. The disappearance of visible PL reveals the complete regrowth of a stoichiometric SiO2 matrix around a nanocrystallite Si cluster after annealing. The results of the transient luminescent analysis of Si-rich SiOx samples corroborate well with the observed values and reveal a lifetime of 43 µs under an optimized nc-Si precipitation condition of 1100°C annealing for 3 h.
Relation: Jpn. J. Appl. Phys., 45(2A): 1040-1043
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