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http://ir.ncue.edu.tw/ir/handle/987654321/15464
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| 題名: | Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures |
| 作者: | Lin, Chun-Jung;Lin, Chi-Kua;Chang, Chih-Wei;Chue, Yu-Lun;Kuo, Hao-Chung;Diau, Eric Wei-Guang;Chou, Li-Jen;Lin, Gong-Ru |
| 貢獻者: | 化學系 |
| 關鍵詞: | Silicon nanocrystals;Photoluminescence;Plasma enhanced chemical vapor deposition;Si-rich silicon dioxide;Lifetime |
| 日期: | 2006
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| 上傳時間: | 2013-02-05T02:21:16Z
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| 出版者: | The Japan Society of Applied Physics |
| 摘要: | Near-infrared photoluminescent dynamics of thermally annealed Si-rich SiOx films grown by plasma enhanced chemical vapor deposition at different substrate temperatures and N2O/SiH4 fluence ratios are studied. The size of nanocrystallite Si (nc-Si) critically depends on the density of oxygen atoms in a Si-rich layer when the N2O/SiH4 ratio is smaller than 4; that is, it significantly increases at low N2O/SiH4 ratios. Deposition at a high N2O/SiH4 ratio strongly reduces the density of nc-Si and degrades the luminescence at 700–800 nm since the density of oxygen atoms is sufficient in the reaction of nc-Si with silicon atoms and formation of a stoichiometric SiO2 matrix. Under a high RF power condition, the increasing substrate temperature usually inhibits the precipitation of nc-Si since high-temperature growth facilitates stochiometric SiO2 deposition. The disappearance of visible PL reveals the complete regrowth of a stoichiometric SiO2 matrix around a nanocrystallite Si cluster after annealing. The results of the transient luminescent analysis of Si-rich SiOx samples corroborate well with the observed values and reveal a lifetime of 43 µs under an optimized nc-Si precipitation condition of 1100°C annealing for 3 h. |
| 關聯: | Jpn. J. Appl. Phys., 45(2A): 1040-1043 |
| 顯示於類別: | [化學系] 期刊論文
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