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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15511

Title: Investigation of Electronic Transport in Lateral NiFe/Al2O3/p-Si/Al2O3/NiFe Junctions
Authors: Lee, Y. C.;Lin, C. W.;Lee, H. M.;Horng, Lance;Wu, J. C.
Contributors: 物理學系
Keywords: Current enhancement;Poole-Frenkel (PF) effect;Trapping assisted process
Date: 2011-10
Issue Date: 2013-02-05T02:49:25Z
Publisher: IEEE
Abstract: A series of lateral junctions consisting of NiFe/Al2O3/p-Si/Al2O3/NiFe have been investigated for the understanding of manipulating
the electronic spin in semiconducting channel. Devices with various conducting channel lengths between two electrodes were fabricated
using a top–down technique. An ion beam sputtering was used for the required film stack and an electron beam lithography in combination
with ion beam etching technique were adopted for patterning. The current-voltage measurements reveal a remarkable phenomenon
of current enhancement, indicating a formation of the interface state in such devices. This transport behavior associated with trapping
assistance has also been demonstrated with a fitting based on Poole–Frenkel effect. The results also show that a transition from trapping
assisted process to direct tunneling process occurs when the semiconducting channel length is below 1 m. In addition, the current
enhancement may be suppressed with increasing the thickness of the oxide layer.
Relation: IEEE Transactions on Magnetics, 47(10): 4147-4150
Appears in Collections:[物理學系] 期刊論文

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