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題名: | Single-electron Transistors and Memory Cells with Au Colloidal Islands |
作者: | Wu, Cen-Shawn;Chen, C. D.;Shih, S. M.;Su, W. F. |
貢獻者: | 物理學系 |
日期: | 2002-12
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上傳時間: | 2013-03-12T04:06:05Z
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出版者: | American Institute of Physics |
摘要: | In this study, single-electron transistors and memory cells with Au colloidal islands linked by C60 derivatives have been fabricated by hybridization of top–down advanced electron-beam lithography and bottom–up nanophased-material synthesis techniques. Low-temperature transport measurements exhibit clear Coulomb-blockade-type current–voltage characteristics and hysteretic-type gate-modulated current. The hysteresis is attributed to the presence of electrically isolated charge–storage islands. With the guidance provided by Monte Carlo simulation, we propose a circuit model and give an estimate of the sample parameters. |
關聯: | Applied Physics Letters, 81(24): 4595-4597 |
顯示於類別: | [物理學系] 期刊論文
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