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题名: Single-electron Transistors and Memory Cells with Au Colloidal Islands
作者: Wu, Cen-Shawn;Chen, C. D.;Shih, S. M.;Su, W. F.
贡献者: 物理學系
日期: 2002-12
上传时间: 2013-03-12T04:06:05Z
出版者: American Institute of Physics
摘要: In this study, single-electron transistors and memory cells with Au colloidal islands linked by C60 derivatives have been fabricated by hybridization of top–down advanced electron-beam lithography and bottom–up nanophased-material synthesis techniques. Low-temperature transport measurements exhibit clear Coulomb-blockade-type current–voltage characteristics and hysteretic-type gate-modulated current. The hysteresis is attributed to the presence of electrically isolated charge–storage islands. With the guidance provided by Monte Carlo simulation, we propose a circuit model and give an estimate of the sample parameters.
關聯: Applied Physics Letters, 81(24): 4595-4597
显示于类别:[物理學系] 期刊論文


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