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請使用永久網址來引用或連結此文件:
http://ir.ncue.edu.tw/ir/handle/987654321/15790
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| 題名: | Effects of Focused Gallium Ion-beam Implantation on Properties of Nanochannels on Silicon-on-insulator Substrates |
| 作者: | Pan, A.;Wang, Y. L.;Wu, Cen-Shawn;Chen, C. D.;Liu, N. W. |
| 貢獻者: | 物理學系 |
| 日期: | 2005
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| 上傳時間: | 2013-03-12T04:06:08Z
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| 出版者: | American Vacuum Society |
| 摘要: | Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale. |
| 關聯: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 23(6): 2288-2291 |
| 顯示於類別: | [物理學系] 期刊論文
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