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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15790

Title: Effects of Focused Gallium Ion-beam Implantation on Properties of Nanochannels on Silicon-on-insulator Substrates
Authors: Pan, A.;Wang, Y. L.;Wu, Cen-Shawn;Chen, C. D.;Liu, N. W.
Contributors: 物理學系
Date: 2005
Issue Date: 2013-03-12T04:06:08Z
Publisher: American Vacuum Society
Abstract: Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.
Relation: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 23(6): 2288-2291
Appears in Collections:[物理學系] 期刊論文

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