National Changhua University of Education Institutional Repository : Item 987654321/15790

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 29929170 Online Users : 458

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/15790

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15790

Title:	Effects of Focused Gallium Ion-beam Implantation on Properties of Nanochannels on Silicon-on-insulator Substrates
Authors:	Pan, A.;Wang, Y. L.;Wu, Cen-Shawn;Chen, C. D.;Liu, N. W.
Contributors:	物理學系
Date:	2005
Issue Date:	2013-03-12T04:06:08Z
Publisher:	American Vacuum Society
Abstract:	Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.
Relation:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 23(6): 2288-2291
Appears in Collections:	[Department of Physics] Periodical Articles

Files in This Item:

File	Size	Format
2020202110001.pdf	7Kb	Adobe PDF	400	View/Open