English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6507/11669
造訪人次 : 29721012      線上人數 : 407
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/15792

題名: Strain Relaxation and Quantum Confinement in InGaN/GaN Nanoposts
作者: Chen, Horng-Shyang;Yeh, Dong-Ming;Lu, Yen-Cheng;Chen, Cheng-Yen;Huang, Chi-Feng;Tang, Tsung-Yi;Yang, C. C.;Wu, Cen-Shawn;Chen, Chii-Dong
貢獻者: 物理學系
日期: 2006
上傳時間: 2013-03-12T04:06:21Z
出版者: IOP Publishing
摘要: Nanoposts of 10–40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography and inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral peak position becomes less sensitive to carrier screening. On the basis of the temperature-dependent PL and time-resolved PL measurements and a numerical calculation of the effect of quantum confinement, we conclude that the optical behaviours of the nanoposts are mainly controlled by the combined effect of 3D quantum confinement and strain relaxation.
關聯: Nanotechnology, 17(5): 1454-1458
顯示於類別:[物理學系] 期刊論文

文件中的檔案:

檔案 大小格式瀏覽次數
index.html0KbHTML623檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋