National Changhua University of Education Institutional Repository : Item 987654321/15792
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 30085843      在线人数 : 910
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/15792

题名: Strain Relaxation and Quantum Confinement in InGaN/GaN Nanoposts
作者: Chen, Horng-Shyang;Yeh, Dong-Ming;Lu, Yen-Cheng;Chen, Cheng-Yen;Huang, Chi-Feng;Tang, Tsung-Yi;Yang, C. C.;Wu, Cen-Shawn;Chen, Chii-Dong
贡献者: 物理學系
日期: 2006
上传时间: 2013-03-12T04:06:21Z
出版者: IOP Publishing
摘要: Nanoposts of 10–40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography and inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral peak position becomes less sensitive to carrier screening. On the basis of the temperature-dependent PL and time-resolved PL measurements and a numerical calculation of the effect of quantum confinement, we conclude that the optical behaviours of the nanoposts are mainly controlled by the combined effect of 3D quantum confinement and strain relaxation.
關聯: Nanotechnology, 17(5): 1454-1458
显示于类别:[物理學系] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML634检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈