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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15793

Title: TaSi2 Nanowires: A Potential Field Emitter and Interconnect
Authors: Chueh, Yu-Lun;Ko, Mong-Tzong;Chou, Li-Jen;Chen, Lih-Juann;Wu, Cen-Shawn;Chen, Chii-Dong
Contributors: 物理學系
Date: 2006
Issue Date: 2013-03-12T04:06:22Z
Publisher: American Chemical Society
Abstract: TaSi2 nanowires have been synthesized on a Si substrate by annealing NiSi2 films at 950 °C in an ambient containing Ta vapor. The nanowires could be grown up to 13 μm in length. Field-emission measurements show that the turn-on field is low at 4−4.5 V/μm and the threshold field is down to 6 V/μm with the field enhancement factor as high as 1800. The metallic TaSi2 nanowires exhibit excellent electrical properties with a remarkable high failure current density of 3 × 108 A cm-2. In addition, effects of annealing temperatures and capability of metal silicide mediation layer on the growth of nanowires are addressed. This simple approach promises future applications in nanoelectronics and nano-optoelectronics.
Relation: Nano Letters, 6(8): 1637-1644
Appears in Collections:[物理學系] 期刊論文

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