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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/15798
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| Title: | Cyclotron Localization in a Sub-10-nm Silicon Quantum Dot Single Electron Transistor |
| Authors: | Lin, M. C.;Aravind, K.;Wu, Cen-Shawn;Wu, Y. P.;Kuan, C. H.;Kuo, Watson;Chen, C. D. |
| Contributors: | 物理學系 |
| Date: | 2007
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| Issue Date: | 2013-03-12T04:06:28Z
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| Publisher: | American Institute of Physics |
| Abstract: | The authors have fabricated and measured a lateral Si single electron transistor consisting of a succession of a big island and small quantum dots. The big island gives rise to a small period Coulomb oscillation riding on the large irregular oscillation arising from the small quantum dots. The peaks of the latter shift in the presence of a magnetic field, which is analyzed in the context of field-induced Landau level shift with a soft-wall confinement potential. Furthermore, the current peak was suppressed for fields beyond a threshold value. An explanation based on cyclotron localization at noninteracting Landau levels is presented. |
| Relation: | Applied Physics Letters, 90(3): 032106 |
| Appears in Collections: | [物理學系] 期刊論文
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