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题名: Cyclotron Localization in a Sub-10-nm Silicon Quantum Dot Single Electron Transistor
作者: Lin, M. C.;Aravind, K.;Wu, Cen-Shawn;Wu, Y. P.;Kuan, C. H.;Kuo, Watson;Chen, C. D.
贡献者: 物理學系
日期: 2007
上传时间: 2013-03-12T04:06:28Z
出版者: American Institute of Physics
摘要: The authors have fabricated and measured a lateral Si single electron transistor consisting of a succession of a big island and small quantum dots. The big island gives rise to a small period Coulomb oscillation riding on the large irregular oscillation arising from the small quantum dots. The peaks of the latter shift in the presence of a magnetic field, which is analyzed in the context of field-induced Landau level shift with a soft-wall confinement potential. Furthermore, the current peak was suppressed for fields beyond a threshold value. An explanation based on cyclotron localization at noninteracting Landau levels is presented.
關聯: Applied Physics Letters, 90(3): 032106
显示于类别:[物理學系] 期刊論文


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