National Changhua University of Education Institutional Repository : Item 987654321/15802
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6507/11669
Visitors : 30012388      Online Users : 348
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15802

Title: Control and Detection of Organosilane Polarization on Nanowire Field-Effect Transistors
Authors: Lin, M. C.;Chu, C. J.;Tsai, L. C.;Lin, H. Y.;Wu, Cen-Shawn;Wu, Y. P.;Wu, Y. N.;Shieh, D. B.;Su, Y. W.;Chen, C. D.
Contributors: 物理學系
Date: 2007
Issue Date: 2013-03-12T04:06:31Z
Publisher: American Chemical Society
Abstract: We demonstrated control and detection of UV-induced 3-aminopropyltriethoxysilane (APTES) polarization using silicon nanowire field-effect transistors made by top-down lithograph technology. The electric dipole moment in APTES films induced by UV-illumination was shown to produce negative effective charges. When individual dipoles were aligned with an externally applied electric field, the collective polarization can prevail over the UV-induced charges in the wires and give rise to an abnormal resistance enhancement in n-type wires. Real-time detection of hybridization of 15-mer poly-T/poly-A DNA molecules was performed, and the amount of hybridization-induced charges in the silicon wire was estimated. Based on these results, detection sensitivity of the wire sensors was discussed.
Relation: Nano Letters, 7(12): 3656-3661
Appears in Collections:[Department of Physics] Periodical Articles

Files in This Item:

File SizeFormat
index.html0KbHTML604View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback