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题名: Magnetoresistance Fluctuations in a Weak Disorder Indium Nitride Nanowire
作者: Su, Y. W.;Aravind, K.;Wu, Cen-Shawn;Kuo, Watson;Chen, K. H.;Chen, L. C.;Chang-Liao, K. S.;Su, W. F.;Chen, C. D.
贡献者: 物理學系
日期: 2009
上传时间: 2013-03-12T04:06:35Z
出版者: IOP Publishing
摘要: We report measurements of magnetoresistance (MR) fluctuations in a weak disorder indium nitride nanowire. The MR fluctuations are reproducible, aperiodic and symmetric in magnetic field but are asymmetric upon reversal of bias direction. The fluctuations are analysed for both perpendicular and parallel external magnetic field configurations in the light of tunnel magnetoresistance at low field and impurity scattering at higher field. The asymmetry in bias reversal is caused by breakdown of time reversal symmetry.
關聯: Journal of Physics D: Applied Physics, 42(18): 185009
显示于类别:[物理學系] 期刊論文

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