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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/15807
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| Title: | Transmission Electron Beam Drilling for Nanoscale Fabrication |
| Authors: | Lin, Tsan-Chu;Su, Rui-Zhi;Lai, Yu-Cheng;Wang, Dau-Chung;Wu, Cen-Shawn |
| Contributors: | 物理學系 |
| Date: | 2010
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| Issue Date: | 2013-03-12T04:06:37Z
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| Publisher: | The Japan Society of Applied Physics |
| Abstract: | We demonstrated that a high-resolution focused electron beam can be used to fabricate metal nanostructures and devices on insulating membranes by nanosculpting metal films. This top-down focused electron beam drilling method works by the controlled ablation of materias to produce nanoscale devices with near-atomic the precision. In addition, we have fabricated a single-electron transistor (SET) on free-standing transparent Si3N4 membranes, which permits enables us to explore quantum tunneling effects in narrow-constriction structures. The produced SET exhibited distinct Coulomb-blockade current-voltage characteristics and gate-modulated current at 4.2 K. Its high resolution, geometrical flexibility, and yield make this fabrication method attractive for many applications including nanoelectronics and quantum devices. |
| Relation: | Japanese Journal of Applied Physics, 49(6): 06GH16 |
| Appears in Collections: | [物理學系] 期刊論文
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