National Changhua University of Education Institutional Repository : Item 987654321/15807
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题名: Transmission Electron Beam Drilling for Nanoscale Fabrication
作者: Lin, Tsan-Chu;Su, Rui-Zhi;Lai, Yu-Cheng;Wang, Dau-Chung;Wu, Cen-Shawn
贡献者: 物理學系
日期: 2010
上传时间: 2013-03-12T04:06:37Z
出版者: The Japan Society of Applied Physics
摘要: We demonstrated that a high-resolution focused electron beam can be used to fabricate metal nanostructures and devices on insulating membranes by nanosculpting metal films. This top-down focused electron beam drilling method works by the controlled ablation of materias to produce nanoscale devices with near-atomic the precision. In addition, we have fabricated a single-electron transistor (SET) on free-standing transparent Si3N4 membranes, which permits enables us to explore quantum tunneling effects in narrow-constriction structures. The produced SET exhibited distinct Coulomb-blockade current-voltage characteristics and gate-modulated current at 4.2 K. Its high resolution, geometrical flexibility, and yield make this fabrication method attractive for many applications including nanoelectronics and quantum devices.
關聯: Japanese Journal of Applied Physics, 49(6): 06GH16
显示于类别:[物理學系] 期刊論文

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