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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/1581

Title: “Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate,”
Authors: Chia-Hua Chan;Chia-Hung Hou;Shao-Ze Tseng;Tsing-Jen Chen;Hung-Ta Chien;Fu-Li Hsiao;Chien-Chieh Lee;Yen-Ling Tsai;Chii-Chang Chen
Contributors: 光電科技研究所
Date: 2009
Issue Date: 2010-11-10T07:33:32Z
Abstract: This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω-scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.
Relation: Appl. Phys. Lett. Vol. 95, pp. 011110 (2008 I.F.=3.726)
Appears in Collections:[光電科技研究所] 期刊論文

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