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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15812

Title: Three-dimension Quantum Confinement in InGaN/GaN Nano-rods
Authors: Chen, Horng-Shyang;Yeh, Dong-Ming;Chen, Cheng-Yen;Lu, Yen-Cheng;Huang, Chi-Feng;Tang, Tsung-Yi;Yang, C. C.;Wu, Cen-Shawn;Chen, Chii-Dong
Contributors: 物理學系
Keywords: Nano-rod;InGaN/GaN quantum well;Quantum confinement
Date: 2005-07
Issue Date: 2013-03-12T04:06:56Z
Publisher: IEEE
Abstract: Nano-rods of a few tens nm in size on InGaN/GaN quantum well structures are fabricated with e-beam lithography and dry etching. Theoretical calculations show significant quantum effects when the rod size is < 30 nm.
Relation: The Sixth Asian and Pacific Rim conference on laser and electro-optics and International Quantum Electronics Conference, : 141-142
Appears in Collections:[物理學系] 會議論文

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