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|Title: ||Resonant Inelastic Scattering in Dilue Magnetic Semiconductors by Soft-x-ray Fluorescence Spectroscopy|
|Authors: ||K. Lawniczak-Jablonska;Jia, J. J.;Lin, Lin;M. M. Grush;T. A. Callcott;A. Asfaw;J. A. Carlisle;L. J. Terminello;F. J. Himpsel;D. L. Ederer;J. H. Underwood;R. C. C. Perera|
|Issue Date: ||2013-06-05T07:59:10Z
|Abstract: ||Soft X-ray fluorescence (SXF) provides a means|
of measuring the element and angular momentum selective
valence band density of states in complex materials.
Recent studies have demonstrated that SXF excited near
the absorption threshold generates an array of spectral features
that depend on the nature of the material, particularly
on the localization of excited states in s- and d-band
solids. The current interest in dilute magnetic semiconductors
(DMS) remains highly motivated by recent prospective
applications, especially in optoelectronics. The Mn and S -
L resonant X-ray emission spectra of Zn1−xMnxS (where
0:05 x 1) were measured as the energy of the exciting
radiation was tuned across the S and Mn -L2;3 absorption
edges of these compounds. Strong resonance peaks in
Mn -L emission spectra and the systematic appearance of
new spectral features in S -L emission spectra were observed.
Partial substitution of Zn by a magnetic Mn ion
results in strong hybridization of the Mn 3d orbitals with
the sp band of the host semiconductor. A detailed study
of resonant inelastic scattering in the vicinity of the S
and Mn -L2;3 absorption edges of these DMS is presented.
|Relation: ||Applied Physics A , 65(2): 173-177|
|Appears in Collections:||[物理學系] 期刊論文|
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