National Changhua University of Education Institutional Repository : Item 987654321/17357

English | 正體中文 | 简体中文 | Items with full text/Total items : 6498/11670
Visitors : 26662529 Online Users : 226

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17357

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17357

Title:	Surface Analysis of (NH4)2Sx-treated InGaN using X-ray Photoelectron Spectroscopy
Authors:	Tsai, Chang-Da;Fu, Ching-Hung;Lin, Yow-Jon;Lee, Ching-Ting
Contributors:	光電科技研究所
Keywords:	Electron mobility;Electron traps;Grain boundaries;Organic semiconductors;Passivation;Plasma materials processing;Thin film transistors
Date:	1999-03
Issue Date:	2013-10-02T08:35:23Z
Publisher:	Elsevier B. V.
Abstract:	We report the performance of InGaP/GaAs/InGaP metal–semiconductor–metal photodetectors (MSM-PD's) using indium–tin–oxide (ITO) as transparent and antireflection Schottky electrode. The dark current and photoresponsivity of about 60 pA (i.e. 2.4 μA cm−2) and 0.58 A W−1 at 5 V bias for a 50×50 μm2 photosensitive area with 2 μm fingers and spaces were measured. We demonstrated that the corresponding rise time, fall time, full width at half maximum and 3 dB bandwidth of temporal responses were 26.4, 134.6, 44.6 ps and 7.0 GHz, respectively. The results of InGaP/GaAs/InGaP MSM-PD's with an ITO Schottky electrode were compared to those of identical geometry devices fabricated with a Ti/Pt/Au Schottky electrode.
Relation:	Solid-State Electronics, 43(3): 665-670
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	471	View/Open