English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 24514877      Online Users : 64
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17359

Title: X-ray Photoelectron Spectroscopy Study of (NH4)2Sx-treated Mg-doped GaN Layers
Authors: Lin, Yow-Jon;Tsai, Chang-Da;Lyu, Yen-Tang;Lee, Ching-Ting
Contributors: 光電科技研究所
Keywords: Gallium compounds;Passivation;X-ray photoelectron spectra;Surface treatment;Wide band gap semiconductors;Surface chemistry;Impurity-vacancy interactions;III-V semiconductors;Magnesium
Date: 2000-07
Issue Date: 2013-10-02T08:35:26Z
Publisher: American Institute of Physics
Abstract: We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.
Relation: Applied Physics Letters, 77(5): 687-689
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback