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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17359

Title: X-ray Photoelectron Spectroscopy Study of (NH4)2Sx-treated Mg-doped GaN Layers
Authors: Lin, Yow-Jon;Tsai, Chang-Da;Lyu, Yen-Tang;Lee, Ching-Ting
Contributors: 光電科技研究所
Keywords: Gallium compounds;Passivation;X-ray photoelectron spectra;Surface treatment;Wide band gap semiconductors;Surface chemistry;Impurity-vacancy interactions;III-V semiconductors;Magnesium
Date: 2000-07
Issue Date: 2013-10-02T08:35:26Z
Publisher: American Institute of Physics
Abstract: We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.
Relation: Applied Physics Letters, 77(5): 687-689
Appears in Collections:[光電科技研究所] 期刊論文

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