National Changhua University of Education Institutional Repository : Item 987654321/17359
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題名: X-ray Photoelectron Spectroscopy Study of (NH4)2Sx-treated Mg-doped GaN Layers
作者: Lin, Yow-Jon;Tsai, Chang-Da;Lyu, Yen-Tang;Lee, Ching-Ting
貢獻者: 光電科技研究所
關鍵詞: Gallium compounds;Passivation;X-ray photoelectron spectra;Surface treatment;Wide band gap semiconductors;Surface chemistry;Impurity-vacancy interactions;III-V semiconductors;Magnesium
日期: 2000-07
上傳時間: 2013-10-02T08:35:26Z
出版者: American Institute of Physics
摘要: We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.
關聯: Applied Physics Letters, 77(5): 687-689
顯示於類別:[光電科技研究所] 期刊論文

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