National Changhua University of Education Institutional Repository : Item 987654321/17360
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6458/11630
造访人次 : 13914309      在线人数 : 71
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/17360

题名: Investigation of Surface Treatments for Nonalloyed Ohmic Contact Formation in Ti�Al Contacts to n-type GaN
作者: Lin, Yow-Jon;Lee, Ching-Ting
贡献者: 光電科技研究所
关键词: Titanium;Aluminium;Gallium compounds;III-V semiconductors;Surface treatment;Ohmic contacts;Contact resistance;X-ray photoelectron spectra;Wide band gap semiconductors
日期: 2000-12
上传时间: 2013-10-02T08:35:27Z
出版者: American Institute of Physics
摘要: To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0×10−5 Ω cm2 for the Ti/Al nonalloyed ohmic contacts to (NH4)2Sx-treated n-type GaN can be obtained. The nonalloyed ohmic contact formation would be impeded by the native oxide and the hydroxyl induced from the surface treatment of chemical solutions.
關聯: Applied Physics Letters, 77(24): 3986-3988
显示于类别:[光電科技研究所] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML333检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈