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题名: Investigation of Surface Treatments for Nonalloyed Ohmic Contact Formation in Ti�Al Contacts to n-type GaN
作者: Lin, Yow-Jon;Lee, Ching-Ting
贡献者: 光電科技研究所
关键词: Titanium;Aluminium;Gallium compounds;III-V semiconductors;Surface treatment;Ohmic contacts;Contact resistance;X-ray photoelectron spectra;Wide band gap semiconductors
日期: 2000-12
上传时间: 2013-10-02T08:35:27Z
出版者: American Institute of Physics
摘要: To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0×10−5 Ω cm2 for the Ti/Al nonalloyed ohmic contacts to (NH4)2Sx-treated n-type GaN can be obtained. The nonalloyed ohmic contact formation would be impeded by the native oxide and the hydroxyl induced from the surface treatment of chemical solutions.
關聯: Applied Physics Letters, 77(24): 3986-3988
显示于类别:[光電科技研究所] 期刊論文


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