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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17361

Title: Low Resistive Ohmic Contact Formation on Surface Treated-n-GaN Alloyed at Low Temperature
Authors: Lin, Yow-Jon;Lee, Hsin-Ying;Hwang, Fu-Tsai;Lee, Ching-Ting
Contributors: 光電科技研究所
Keywords: Gallium nitride;Ohmic contacts;Specific contact resistance;Surface treatment
Date: 2001-05
Issue Date: 2013-10-02T08:35:28Z
Publisher: Springer-Verlag
Abstract: Ohmic contacts to n-type GaN with low contact resistance were developed by (NH4)2Sx and KOH+(NH4)2Sx surface treatments prior to Ti/Al metal deposition. The lowest specific contact resistance of 3.0 ´ 10–6 W-cm2 was obtained for Ti/Al contacts in an (NH4)2Sx-treated GaN layer alloyed at 300°C for 3 min. To obtain the lowest specific contact resistance for a low temperature alloy, the (NH4)2Sx treatment conditions for both (NH4)2Sx and KOH+(NH4)2Sx-treated n-GaN layers have been investigated and the mechanism for ohmic formation in low temperature alloys analyzed.
Relation: Journal of Electronic Materials, 30(5): 532-537
Appears in Collections:[光電科技研究所] 期刊論文

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