National Changhua University of Education Institutional Repository : Item 987654321/17361
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题名: Low Resistive Ohmic Contact Formation on Surface Treated-n-GaN Alloyed at Low Temperature
作者: Lin, Yow-Jon;Lee, Hsin-Ying;Hwang, Fu-Tsai;Lee, Ching-Ting
贡献者: 光電科技研究所
关键词: Gallium nitride;Ohmic contacts;Specific contact resistance;Surface treatment
日期: 2001-05
上传时间: 2013-10-02T08:35:28Z
出版者: Springer-Verlag
摘要: Ohmic contacts to n-type GaN with low contact resistance were developed by (NH4)2Sx and KOH+(NH4)2Sx surface treatments prior to Ti/Al metal deposition. The lowest specific contact resistance of 3.0 ´ 10–6 W-cm2 was obtained for Ti/Al contacts in an (NH4)2Sx-treated GaN layer alloyed at 300°C for 3 min. To obtain the lowest specific contact resistance for a low temperature alloy, the (NH4)2Sx treatment conditions for both (NH4)2Sx and KOH+(NH4)2Sx-treated n-GaN layers have been investigated and the mechanism for ohmic formation in low temperature alloys analyzed.
關聯: Journal of Electronic Materials, 30(5): 532-537
显示于类别:[光電科技研究所] 期刊論文

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