English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6480/11652
Visitors : 20717462      Online Users : 69
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17362

Title: Surface Analysis of (NH4)2Sx-treated InGaN using X-ray Photoelectron Spectroscopy
Authors: Lin, Yow-Jon;Lee, Ching-Ting
Contributors: 光電科技研究所
Keywords: Indium compounds;Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Surface composition;Surface treatment;X-ray photoelectron spectra;Surface contamination;Bonds (chemical);Ohmic contacts;Schottky barriers;Surface cleaning;Ammonium compounds;Vvacancies (crystal)
Date: 2001-09
Issue Date: 2013-10-02T08:35:30Z
Publisher: IEEE
Abstract: We present the surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy. The native oxide and organic contamination on the InGaN surface can be removed by (NH4)2Sx surface treatment. However, the hydroxyl species present on the InGaN surface cannot be removed. Because Ga–S and In–S bonds were formed and N–S bonds were not observed, we deduce that the sulfur atoms would occupy the nitrogen-related vacancies and bond with the Ga and In atoms. The clean surface and surface state reduction caused from the (NH4)2Sx surface treatment would be useful for the formation of ohmic and Schottky contacts between the metal and InGaN layers.
Relation: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 19(5): 1734-1738
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat
2020600310001.pdf76KbAdobe PDF347View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback