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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17363

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17363

Title:	Schottky Barrier Height and Surface State Density of Ni/Au Contacts to (NH4)�2Sx-treated n-type GaN
Authors:	Lee, Ching-Ting;Lin, Yow-Jon;Liu, Day-Shan
Contributors:	光電科技研究所
Keywords:	Nickel alloys;Gold alloys;Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Schottky barriers;Surface states;Fermi level;Dangling bonds;Vacancies (crystal);Photoluminescence;Passivation;Work function;Semiconductor device metallisation
Date:	2001-10
Issue Date:	2013-10-02T08:35:43Z
Publisher:	American Institute of Physics
Abstract:	By using capacitance–voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)2Sx treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH4)2Sx. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH4)2Sx-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga–S bonds.
Relation:	Applied Physics Letters, 79(16): 2573-2575
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

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