National Changhua University of Education Institutional Repository : Item 987654321/17363
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题名: Schottky Barrier Height and Surface State Density of Ni/Au Contacts to (NH4)�2Sx-treated n-type GaN
作者: Lee, Ching-Ting;Lin, Yow-Jon;Liu, Day-Shan
贡献者: 光電科技研究所
关键词: Nickel alloys;Gold alloys;Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Schottky barriers;Surface states;Fermi level;Dangling bonds;Vacancies (crystal);Photoluminescence;Passivation;Work function;Semiconductor device metallisation
日期: 2001-10
上传时间: 2013-10-02T08:35:43Z
出版者: American Institute of Physics
摘要: By using capacitance–voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)2Sx treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH4)2Sx. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH4)2Sx-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga–S bonds.
關聯: Applied Physics Letters, 79(16): 2573-2575
显示于类别:[光電科技研究所] 期刊論文

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