National Changhua University of Education Institutional Repository : Item 987654321/17363
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6491/11663
造訪人次 : 24648456      線上人數 : 42
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋


題名: Schottky Barrier Height and Surface State Density of Ni/Au Contacts to (NH4)�2Sx-treated n-type GaN
作者: Lee, Ching-Ting;Lin, Yow-Jon;Liu, Day-Shan
貢獻者: 光電科技研究所
關鍵詞: Nickel alloys;Gold alloys;Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Schottky barriers;Surface states;Fermi level;Dangling bonds;Vacancies (crystal);Photoluminescence;Passivation;Work function;Semiconductor device metallisation
日期: 2001-10
上傳時間: 2013-10-02T08:35:43Z
出版者: American Institute of Physics
摘要: By using capacitance–voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)2Sx treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH4)2Sx. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH4)2Sx-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga–S bonds.
關聯: Applied Physics Letters, 79(16): 2573-2575
顯示於類別:[光電科技研究所] 期刊論文


檔案 大小格式瀏覽次數



DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋